Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16596534Application Date: 2019-10-08
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Publication No.: US11075269B2Publication Date: 2021-07-27
- Inventor: Cheng-Yi Peng , Ting Tsai , Chung-Wei Hung , Jung-Ting Chen , Ying-Hua Lai , Song-Bor Lee , Bor-Zen Tien
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/24 ; H01L29/78 ; H01L21/02 ; H01L21/265
Abstract:
A semiconductor device, includes a channel region, and a source/drain region adjacent to the channel region. The source/drain region includes a first epitaxial layer, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer, and the first epitaxial layer is made of SiAs.
Public/Granted literature
- US20200176566A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-06-04
Information query
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