Invention Grant
- Patent Title: 3D capacitor based on fin structure having low-resistance surface and method of manufacturing same
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Application No.: US16395118Application Date: 2019-04-25
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Publication No.: US11075278B2Publication Date: 2021-07-27
- Inventor: Chi-Wen Liu , Chao-Hsiung Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/66 ; H01L49/02
Abstract:
A three-dimensional (3D) capacitor includes a semiconductor substrate; one or more fins extending from the semiconductor substrate; an insulator material between each of the one or more fins; a dielectric layer over a first portion of the one or more fins and over the insulator material; a first electrode over the dielectric layer; spacers on sidewalls of the first electrode; and a second electrode over a second portion of the one or more fins and over the insulator material, wherein the first and second portions are different.
Public/Granted literature
- US20190252519A1 3D Capacitor and Method of Manufacturing Same Public/Granted day:2019-08-15
Information query
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