Invention Grant
- Patent Title: Heterojunction bipolar transistor including ballast resistor and semiconductor device
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Application No.: US16525400Application Date: 2019-07-29
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Publication No.: US11075289B2Publication Date: 2021-07-27
- Inventor: Isao Obu , Yasunari Umemoto , Takayuki Tsutsui , Satoshi Tanaka
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: JPJP2018-157609 20180824
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/73 ; H01L29/205 ; H01L29/417 ; H01L29/737 ; H01L21/8252 ; H01L21/285 ; H01L21/306 ; H01L21/308 ; H01L29/66 ; H01L27/082 ; H03F3/24 ; H03F1/56
Abstract:
A first sub-collector layer functions as an inflow path of a collector current that flows in a collector layer of a heterojunction bipolar transistor. A collector ballast resistor layer having a lower doping concentration than the first sub-collector layer is disposed between the collector layer and the first sub-collector layer.
Public/Granted literature
- US20200066886A1 HETEROJUNCTION BIPOLAR TRANSISTOR AND SEMICONDUCTOR DEVICE Public/Granted day:2020-02-27
Information query
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