Thin-film transistor and fabrication method thereof, array substrate and display device

Invention Grant

US11075304B1 Thin-film transistor and fabrication method thereof, array substrate and display device 有权

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Patent Title: Thin-film transistor and fabrication method thereof, array substrate and display device
Application No.: US16064087

Application Date: 2017-12-18
Publication No.: US11075304B1

Publication Date: 2021-07-27
Inventor: Jun Wang , Zhonghao Huang , Yongliang Zhao , Seungmoo Rim
Applicant: BOE TECHNOLOGY GROUP CO., LTD. , CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
Applicant Address: CN Beijing; CN Chongqing
Assignee: BOE TECHNOLOGY GROUP CO., LTD.,CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
Current Assignee Address: CN Beijing; CN Chongqing
Agency: Westerman, Hattori, Daniels & Adrian, LLP
Priority: CN201710575147.7 20170714
International Application: PCT/CN2017/116896 WO 20171218
International Announcement: WO2019/010920 WO 20190117
Main IPC: H01L21/467
IPC: H01L21/467 ; H01L21/4757 ; H01L21/4763 ; H01L27/12 ; H01L29/66 ; H01L29/786

Thin-film transistor and fabrication method thereof, array substrate and display device

Abstract:

A thin film transistor is disclosed. The thin-film transistor includes an active layer (3); a source electrode (1); and a drain electrode (2). The active layer includes an active pattern region (4), the active pattern region including a main body portion (5) and a plurality of protrusion portions (6) on both sides of the main body portion. The protrusion portions are connected to the main body portion.

Public/Granted literature

US20210210641A1 THIN-FILM TRANSISTOR AND FABRICATION METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2021-07-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/465	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/469）
H01L21/467	.......应用掩膜的