Invention Grant
- Patent Title: Buffer layer film-forming method and buffer layer
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Application No.: US15305397Application Date: 2014-05-22
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Publication No.: US11075318B2Publication Date: 2021-07-27
- Inventor: Takahiro Shirahata , Hiroyuki Orita , Takahiro Hiramatsu , Hiroshi Kobayashi
- Applicant: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
- Applicant Address: JP Chuo-ku
- Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
- Current Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
- Current Assignee Address: JP Chuo-ku
- Agency: Xsensus LLP
- International Application: PCT/JP2014/063544 WO 20140522
- International Announcement: WO2015/177899 WO 20151126
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0224

Abstract:
A method for film-forming a buffer layer to be used for a solar cell, the buffer layer being disposed between a light absorbing layer and a transparent conductive film. Specifically, in this buffer layer film-forming method, a solution is formed into a mist, the solution containing zinc and almuminum as metal raw materials of the buffer layer. Then, a substrate disposed in the atmosphere is heated. Then, the mist of the solution is sprayed to the substrate being heated.
Public/Granted literature
- US20170047472A1 BUFFER LAYER FILM-FORMING METHOD AND BUFFER LAYER Public/Granted day:2017-02-16
Information query
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