A photon detector includes at least one sensor element, formed by a semiconductor material and sensitive to incident radiation, forming a pixel array including sensor pixels; and a detector circuit, situated after the sensor element in the direction of incident radiation, to detect charge carriers generated in the semiconductor material as a result of radiation. The detector circuit includes an integrated circuit with detector pixels in signal communication contact with the sensor pixels; and an enclosure surrounding the integrated circuit and in which the integrated circuit is embedded, and on which is formed on a pixel face facing the sensor element. A contact redistribution layer is formed, in which contact pads are formed for signal-communicatively connecting the detector pixels to the correspondingly assigned sensor pixels, and also conductor tracks are formed for connecting the contact pads to the detector pixels of the integrated circuit.