- Patent Title: Oxide sintered body, sputtering target and oxide semiconductor film
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Application No.: US16096641Application Date: 2017-04-26
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Publication No.: US11078120B2Publication Date: 2021-08-03
- Inventor: Kazuyoshi Inoue , Futoshi Utsuno , Shigekazu Tomai , Masatoshi Shibata , Mami Itose
- Applicant: IDEMITSU KOSAN CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2016-088123 20160426,JPJP2016-251809 20161226
- International Application: PCT/JP2017/016493 WO 20170426
- International Announcement: WO2017/188299 WO 20171102
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C04B35/01 ; C04B35/626 ; C04B35/64 ; C23C14/08 ; C23C14/34 ; H01L27/12 ; H01L29/24 ; H01L29/786
Abstract:
An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.
Public/Granted literature
- US20200325072A1 OXIDE SINTERED BODY, SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM Public/Granted day:2020-10-15
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