Invention Grant
- Patent Title: Metal oxynitride thin film, process for producing metal oxynitride thin film, and capacitor element
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Application No.: US16185498Application Date: 2018-11-09
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Publication No.: US11078123B2Publication Date: 2021-08-03
- Inventor: Kumiko Yamazaki , Yuki Nagamine , Takeshi Shibahara , Yuji Umeda , Junichi Yamazaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2017-217710 20171110,JPJP2018-196779 20181018
- Main IPC: C04B35/58
- IPC: C04B35/58 ; H01G4/12 ; C23C14/00 ; C01B21/082

Abstract:
A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A1+αBOx+αNy wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.
Public/Granted literature
- US20190144341A1 METAL OXYNITRIDE THIN FILM, PROCESS FOR PRODUCING METAL OXYNITRIDE THIN FILM, AND CAPACITOR ELEMENT Public/Granted day:2019-05-16
Information query
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