Invention Grant
- Patent Title: Method for making epitaxial structure
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Application No.: US15434034Application Date: 2017-02-15
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Publication No.: US11078597B2Publication Date: 2021-08-03
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing; TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing; TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN201210085270.8 20120328
- Main IPC: C30B25/18
- IPC: C30B25/18 ; H01L21/02 ; C30B29/40 ; H01L51/00 ; C30B29/38 ; C30B25/10 ; C30B25/04 ; C30B25/00 ; C30B25/02 ; C30B19/00

Abstract:
A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is placed on the epitaxial growth surface. A buffer layer is formed on the epitaxial growth surface. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are separated to form a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface.
Public/Granted literature
- US20170167050A1 METHOD FOR MAKING EPITAXIAL STRUCTURE Public/Granted day:2017-06-15
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