Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
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Application No.: US16370409Application Date: 2019-03-29
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Publication No.: US11079539B2Publication Date: 2021-08-03
- Inventor: Tetsuya Iida , Yasutaka Nakashiba
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2018-078162 20180416
- Main IPC: G02B6/12
- IPC: G02B6/12 ; H01S5/02345 ; H01L31/12 ; H01L31/0232 ; H01L31/18 ; H01S5/02326 ; H01S5/02 ; H01S5/026 ; H01S5/40 ; H01S5/02375 ; H01S5/042 ; H01S5/028 ; H01L31/02

Abstract:
According to the present invention, a first semiconductor chip includes a semiconductor substrate, an optical waveguide formed on an upper surface of the semiconductor substrate, and a concave portion formed in the semiconductor substrate in a region that differs from a region in which the optical waveguide is formed. A second semiconductor chip includes a compound semiconductor substrate, and a light emitting unit formed on an upper surface of the compound semiconductor substrate and emitting a laser beam. The second semiconductor chip is mounted in the concave portion of the first semiconductor chip, and a pedestal which is an insulating film is formed between a bottom surface of the concave portion and a back surface of the compound semiconductor substrate.
Public/Granted literature
- US20190317276A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2019-10-17
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