Invention Grant
- Patent Title: Method of manufacturing photo masks
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Application No.: US15966962Application Date: 2018-04-30
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Publication No.: US11079685B2Publication Date: 2021-08-03
- Inventor: Ken-Hsien Hsieh , Ru-Gun Liu , Wei-Shuo Su
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/20 ; H01L21/311 ; G03F1/36 ; G03F1/70 ; G06F30/398 ; G06F119/18

Abstract:
In a method of manufacturing a photo mask used in a semiconductor manufacturing process, a mask pattern layout in which a plurality of patterns are arranged is acquired. The plurality of patterns are converted into a graph having nodes and links. It is determined whether the nodes are colorable by N colors without causing adjacent nodes connected by a link to be colored by a same color, where N is an integer equal to or more than 3. When it is determined that the nodes are colorable by N colors, the nodes are colored with the N colors. The plurality of patterns are classified into N groups based on the N colored nodes. The N groups are assigned to N photo masks. N data sets for the N photo masks are output.
Public/Granted literature
- US20190146333A1 METHOD OF MANUFACTURING PHOTO MASKS Public/Granted day:2019-05-16
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