A non-volatile storage device comprises non-volatile memory cells, clocked circuity, and one or more control circuits. The one or more control circuits are configured to process commands to access the non-volatile memory cells using the clocked circuity, implement a power control loop to regulate power consumption of the non-volatile storage device based on a first feedback signal, implement a temperature control loop to regulate temperature of the non-volatile storage device based on a second feedback signal, and implement a clock frequency control loop to regulate one or more clock frequencies of the clocked circuitry based on a third feedback signal.