Invention Grant
- Patent Title: 3-D stacked memory with reconfigurable compute logic
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Application No.: US15143248Application Date: 2016-04-29
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Publication No.: US11079936B2Publication Date: 2021-08-03
- Inventor: Mu-Tien Chang , Prasun Gera , Dimin Niu , Hongzhong Zheng
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F15/78 ; G06F9/30
Abstract:
A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
Public/Granted literature
- US20170255390A1 3-D STACKED MEMORY WITH RECONFIGURABLE COMPUTE LOGIC Public/Granted day:2017-09-07
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