Invention Grant
- Patent Title: Write training in memory devices
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Application No.: US16171442Application Date: 2018-10-26
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Publication No.: US11079946B2Publication Date: 2021-08-03
- Inventor: Luigi Pilolli , Ali Feiz Zarrin Ghalam , Guan Wang , Qiang Tang
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C16/32

Abstract:
A memory device includes a plurality of input/output (I/O) nodes, a circuit, a latch, a memory, and control logic. The plurality of I/O nodes receive a predefined data pattern. The circuit adjusts a delay for each I/O node as the predefined data pattern is received. The latch latches the data received on each I/O node. The memory stores the latched data. The control logic compares the stored latched data to an expected data pattern and sets the delay for each I/O node based on the comparison.
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