Invention Grant
- Patent Title: Integrated circuit, system, and method of forming the same
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Application No.: US16850849Application Date: 2020-04-16
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Publication No.: US11080454B2Publication Date: 2021-08-03
- Inventor: Shih-Wei Peng , Chih-Ming Lai , Jiann-Tyng Tzeng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G06F30/392
- IPC: G06F30/392 ; H01L23/538

Abstract:
A method of generating an integrated circuit (IC) layout diagram includes arranging first conductive feature layout patterns in a cell region. The first conductive feature layout patterns extend in a first direction, and the cell region has opposite first and second cell boundaries extending in a second direction. Second conductive feature layout patterns are arranged in the cell region and extending in the first direction. The first and second conductive feature layout patterns are alternately arranged. First cut feature layout patterns are arranged on the first cell boundary of the cell region and on ends of the first conductive feature layout patterns. One of the first cut feature layout patterns is offset from another one of the first cut feature layout patterns in the first direction. The IC layout diagram including the first and second conductive feature layout patterns and the first cut feature layout patterns is generated.
Public/Granted literature
- US20210064806A1 INTEGRATED CIRCUIT, SYSTEM, AND METHOD OF FORMING THE SAME Public/Granted day:2021-03-04
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