Invention Grant
- Patent Title: MRAM reference current
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Application No.: US16431158Application Date: 2019-06-04
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Publication No.: US11081155B2Publication Date: 2021-08-03
- Inventor: Chia-Fu Lee , Hon-Jarn Lin , Po-Hao Lee , Ku-Feng Lin , Yi-Chun Shih , Yu-Der Chih
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Merchant & Gould P.C.
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/08 ; H01L27/22
Abstract:
A reference circuit for generating a reference current includes a plurality of resistive elements including at least one magnetic tunnel junction (MTJ). A control circuit is coupled to a first terminal of the at least one MTJ and is configured to selectively flow current through the at least one MTJ in the forward and inverse direction to generate a reference current.
Public/Granted literature
- US20190385656A1 MRAM REFERENCE CURRENT Public/Granted day:2019-12-19
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