Invention Grant
- Patent Title: Geometrically selective deposition of dielectric films utilizing low frequency bias
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Application No.: US16220833Application Date: 2018-12-14
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Publication No.: US11081318B2Publication Date: 2021-08-03
- Inventor: Kenichi Ohno , Keiichi Tanaka , Li-Qun Xia , Tsutomu Tanaka , Dmitry A. Dzilno , Mario D. Silvetti , John C. Forster , Rakesh Ramadas , Mike Murtagh , Alexander V. Garachtchenko
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01J37/32 ; C23C16/507 ; C23C16/455 ; C23C16/56
Abstract:
Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.
Public/Granted literature
- US20190189400A1 Geometrically Selective Deposition Of Dielectric Films Utilizing Low Frequency Bias Public/Granted day:2019-06-20
Information query
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