Invention Grant
- Patent Title: Argon addition to remote plasma oxidation
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Application No.: US16849713Application Date: 2020-04-15
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Publication No.: US11081340B2Publication Date: 2021-08-03
- Inventor: Hansel Lo , Christopher S. Olsen , Eric Kihara Shono , Johanes S. Swenberg , Erika Hansen , Taewan Kim , Lara Hawrylchak
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/02 ; H01J37/32 ; H01L21/311
Abstract:
Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.
Public/Granted literature
- US20200251331A1 ARGON ADDITION TO REMOTE PLASMA OXIDATION Public/Granted day:2020-08-06
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