Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US16686982Application Date: 2019-11-18
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Publication No.: US11081350B2Publication Date: 2021-08-03
- Inventor: Jian-Jou Lian , Yao-Wen Hsu , Neng-Jye Yang , Li-Min Chen , Chia-Wei Wu , Kuan-Lin Chen , Kuo Bin Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/311 ; H01L21/02 ; G03F7/32 ; G03F7/20 ; G03F7/09 ; H01L21/033 ; G03F7/095 ; H01L21/306
Abstract:
A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.
Public/Granted literature
- US20200083038A1 Semiconductor Device and Method of Manufacture Public/Granted day:2020-03-12
Information query
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