Invention Grant
- Patent Title: Fin patterning methods for increased process margins
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Application No.: US16725731Application Date: 2019-12-23
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Publication No.: US11081354B2Publication Date: 2021-08-03
- Inventor: Chin-Yuan Tseng , Wei-Liang Lin , Li-Te Lin , Ru-Gun Liu , Min Cao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/308 ; H01L21/8234 ; H01L21/8238 ; H01L29/417 ; H01L29/66

Abstract:
The present disclosure provides a method in accordance with some embodiments. The method includes forming a mandrel over a substrate, the mandrel having a first sidewall and a second sidewall opposing the first sidewall; forming a first fin on the first sidewall and a second fin on the second sidewall; depositing a dielectric material covering the first fin, the second fin, and the mandrel; partially removing the dielectric material, thereby exposing the second fin; etching the second fin without etching the first fin and the mandrel; removing the dielectric material; and removing the mandrel.
Public/Granted literature
- US20200152464A1 Fin Patterning Methods for Increased Process Margins Public/Granted day:2020-05-14
Information query
IPC分类: