A semiconductor device includes a semiconductor part; first and second electrodes, the semiconductor part being provided between the first and second electrodes; a control electrode selectively provided between the semiconductor part and the second electrode; and a contacting part electrically connecting the semiconductor part and the second electrode. The semiconductor part includes a first layer of a first conductivity type, a second layer of a second conductivity type provided between the first layer and the second electrode, a third layer of the first conductivity type selectively provided between the second layer and the second electrode, and a fourth layer of the second conductivity type selectively provided between the second layer and the second electrode. The contacting part includes a first semiconductor portion of the first conductivity type contacting the third layer, and a second semiconductor portion of the second conductivity type contacting the fourth layer.