- Patent Title: Treatment to interface between metal film and BARC or photoresist
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Application No.: US16426457Application Date: 2019-05-30
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Publication No.: US11081365B2Publication Date: 2021-08-03
- Inventor: Chung-Hao Chang , Chih-Jen Yu , Keh-Wen Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/311 ; H01L29/423 ; H01L21/8234 ; H01L21/321

Abstract:
A method of manufacturing a semiconductor device is disclosed. In the method, a metallic layer is formed over a substrate, the metallic layer is surface-treated with an alkaline solution, and a bottom anti-reflective coating (BARC) layer is formed on the surface-treated metallic layer.
Public/Granted literature
- US20200020546A1 TREATMENT TO INTERFACE BETWEEN METAL FILM AND BARC OR PHOTORESIST Public/Granted day:2020-01-16
Information query
IPC分类: