Invention Grant
- Patent Title: Support and method for producing semiconductor device-mounting substrate using the same
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Application No.: US16606828Application Date: 2018-04-23
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Publication No.: US11081367B2Publication Date: 2021-08-03
- Inventor: Shunsuke Hirano , Yoshihiro Kato , Takaaki Ogashiwa , Kazuaki Kawashita
- Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
- Current Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein P.L.C.
- Priority: JPJP2017-088834 20170427
- International Application: PCT/JP2018/016410 WO 20180423
- International Announcement: WO2018/199003 WO 20181101
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/498
Abstract:
A support including a heat resistant film layer and a resin layer, wherein the heat resistant film layer is laminated on at least one side (a first side) of the resin layer, and the resin layer is in a semi-cured state (B stage).
Public/Granted literature
- US20200043752A1 SUPPORT AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE-MOUNTING SUBSTRATE USING THE SAME Public/Granted day:2020-02-06
Information query
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