Invention Grant
- Patent Title: RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation
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Application No.: US16390496Application Date: 2019-04-22
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Publication No.: US11081385B2Publication Date: 2021-08-03
- Inventor: Julio C. Costa , Michael Carroll
- Applicant: Qorvo US, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/373 ; H01L23/29 ; H01L23/31 ; H01L23/28 ; H01L23/48 ; H01L21/762 ; H01L21/56 ; H01L23/00

Abstract:
The present disclosure relates to a radio frequency (RF) device including a device substrate, a thinned device die with a device region over the device substrate, a first mold compound, and a second mold compound. The device region includes an isolation portion, a back-end-of-line (BEOL) portion, and a front-end-of-line (FEOL) portion with a contact layer and an active section. The contact layer resides over the BEOL portion, the active section resides over the contact layer, and the isolation portion resides over the contact layer to encapsulate the active section. The first mold compound resides over the device substrate, surrounds the thinned device die, and extends vertically beyond the thinned device die to define an opening over the thinned device die and within the first mold compound. The second mold compound fills the opening and directly connects the isolation portion of the thinned device die.
Public/Granted literature
- US12046505B2 RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation Public/Granted day:2024-07-23
Information query
IPC分类: