Invention Grant
- Patent Title: Methods for wafer warpage control
-
Application No.: US16737149Application Date: 2020-01-08
-
Publication No.: US11081408B2Publication Date: 2021-08-03
- Inventor: Dandan Shi , Ming Hu , Shijin Luo , Zhiliang Xia , Zhi Zhang
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/02 ; H01L29/66 ; H01L29/10 ; H01L27/11582 ; H01L27/11556
Abstract:
Aspects of the disclosure provide a method for wafer warpage control. The method includes forming a filling structure in a slit opening on a wafer. Further, the method includes measuring a warpage parameter of the wafer, and determining a thermal profile to adjust a warpage parameter into a target range based on the warpage parameter. Then, the method includes performing a process having the determined thermal profile to adjust the warpage parameter into the target range.
Public/Granted literature
- US20210111079A1 METHODS FOR WAFER WARPAGE CONTROL Public/Granted day:2021-04-15
Information query
IPC分类:
