A method of manufacturing a semiconductor device from a semiconductor wafer in which a plurality of semiconductor chips are formed. The method includes a first process of forming an active region on a first main surface side of the semiconductor wafer and a second process of forming a first process control monitor (PCM) on a second main surface side of the semiconductor wafer. The method further includes before the second process, a third process of forming a second PCM on the first main surface side of the semiconductor wafer. The first PCM and the second PCM are formed at an area located at the same position in a plan view of the semiconductor wafer.