Invention Grant
- Patent Title: Interconnect structure having a fluorocarbon layer
-
Application No.: US16681535Application Date: 2019-11-12
-
Publication No.: US11081478B2Publication Date: 2021-08-03
- Inventor: Ming Zhou
- Applicant: Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Beijing; CN Shanghai
- Assignee: Semiconductor Manufacturing International (Beijing) Corporation,Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Beijing) Corporation,Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Beijing; CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201611156276.4 20161215
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L21/02 ; H01L21/311 ; H01L21/768 ; H01L23/528 ; H01L23/532 ; C01B21/082 ; C07F7/08

Abstract:
An interconnect structure includes a metal interconnect layer, a dielectric layer on the metal interconnect layer, a fluorocarbon layer on the dielectric layer, a metal interconnect extending through the fluorocarbon layer and the dielectric layer to the metal interconnect layer. The metal interconnect includes a first portion extending through the fluorocarbon layer and into an upper portion of the dielectric layer and a second portion below the first portion and extending through a lower portion of the dielectric layer to the metal interconnect layer.
Public/Granted literature
- US20200083209A1 INTERCONNECT STRUCTURE HAVING A FLUOROCARBON LAYER Public/Granted day:2020-03-12
Information query
IPC分类: