Invention Grant
- Patent Title: Semiconductor structure and method of forming the same
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Application No.: US16258566Application Date: 2019-01-26
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Publication No.: US11081500B2Publication Date: 2021-08-03
- Inventor: Te-An Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Wpat, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/78 ; H01L21/308 ; H01L21/762 ; H01L21/84
Abstract:
The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductive substrate and an oxidation region formed on the semiconductive substrate. The oxidation region includes a stage with a first width along a horizontal direction. The semiconductor structure further includes a fin formed on a top surface of the stage. A method for forming the semiconductor structure is also provided.
Public/Granted literature
- US20200243565A1 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2020-07-30
Information query
IPC分类:
