Invention Grant
- Patent Title: Thin film transistor and method of fabricating the same, array substrate and method of fabricating the same, display device
-
Application No.: US16395660Application Date: 2019-04-26
-
Publication No.: US11081501B2Publication Date: 2021-08-03
- Inventor: Wei Song , Ce Zhao , Bin Zhou , Dongfang Wang , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
- Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Anhui; CN Beijing
- Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Anhui; CN Beijing
- Agency: Westman, Champlin & Koehler, P.A.
- Priority: CN201811081440.9 20180917
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L21/3213 ; H01L29/40 ; H01L29/66 ; H01L21/02 ; H01L21/473 ; H01L21/44 ; H01L29/417

Abstract:
A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.
Public/Granted literature
Information query
IPC分类: