A buried metal-insulator-metal (MIM) capacitor with landing pads is formed between first and second semiconductor substrates. The landing pads provide increased area for contacting which may decrease the contact resistors of the capacitor. The area of the buried MIM capacitor can be varied to provide a tailored capacitance. The buried MIM capacitor is thermally stable since the MIM capacitor includes refractory metal or metal alloy layers as the capacitor plates.