A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating layer provided on a surface of the silicon carbide substrate, a gate electrode provided on the gate insulating layer, a first insulting layer provided on the gate electrode, a first layer provided on the first insulating layer, a second insulating layer provided on the first insulating layer, and an interconnect layer provided on the second insulating layer. The second insulating layer includes SiN or SiON. The first layer includes one of Ti, TiN, Ta, and TaN. The interconnect layer includes Al or Cu.