A semiconductor device includes a first electrode, a silicon carbide substrate having a first surface electrically connected with the first electrode and a second surface opposite to the first surface, an ohmic junction layer disposed on the second surface, and a second electrode disposed on the ohmic junction layer. The ohmic junction layer has a first layer that is directly disposed on the second surface and includes a first silicide of titanium and a first silicide of a metal element other than titanium, and a second layer that is directly disposed on the first layer, includes a second silicide of titanium and a second silicide of the metal element, and has a lower titanium concentration than the first layer.