Invention Grant
- Patent Title: IGBT power device
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Application No.: US16627675Application Date: 2018-10-29
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Publication No.: US11081574B2Publication Date: 2021-08-03
- Inventor: Wei Liu , Yuanlin Yuan , Lei Liu , Rui Wang , Yi Gong
- Applicant: SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Applicant Address: CN Jiangsu
- Assignee: SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Current Assignee: SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Current Assignee Address: CN Jiangsu
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: CN201711058063.2 20171101,CN201711058074.0 20171101,CN201711058787.7 20171101
- International Application: PCT/CN2018/112338 WO 20181029
- International Announcement: WO2019/085850 WO 20190509
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H03K17/567
Abstract:
Disclosed is an insulated gate bipolar transistor (IGBT) power device, including a bipolar transistor, a first MOS transistor, a second MOS transistor, a body diode and a body region contact diode. An anode of the body region contact diode and an anode of the body diode are connected to the bipolar transistor. A first gate of the first MOS transistor is externally connected to a gate voltage of the IGBT power device and configured to control turning on and off of the first MOS transistor by means of the gate voltage of the IGBT power device. A second gate of the second MOS transistor is connected to an emitter voltage of the IGBT power device and configured to control turning on and off of the second MOS transistor by means of the emitter voltage of the IGBT power device.
Public/Granted literature
- US20200161458A1 IGBT POWER DEVICE Public/Granted day:2020-05-21
Information query
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