An insulated gate bipolar transistor (IGBT) device and a method for manufacturing the same are provided. The present disclosure relates to power semiconductor devices. In order to relieve the problem of wafer warping caused by trench stress in an IGBT manufacturing process without affecting other performance parameters of the IGBT, it provides the following technical solution: optimizing the design of arrangement densities and arrangement regions of device trenches. The present disclosure can alleviate the problem of wafer warping caused by trench stress in the IGBT manufacturing process, improve the product yield of IGBT chips, and enhance the latch-up immunity of the IGBT, so that the IGBT is more robust and durable.