Invention Grant
- Patent Title: Insulated-gate semiconductor device and method of manufacturing the same
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Application No.: US16726289Application Date: 2019-12-24
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Publication No.: US11081576B2Publication Date: 2021-08-03
- Inventor: Takamasa Ishikawa , Seiji Noguchi
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JPJP2019-31543 20190225
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/66 ; H01L21/66 ; H01L21/768 ; H01L29/06 ; H01L29/10 ; H01L29/08 ; H01L29/423 ; H01L29/772 ; H01L21/265 ; H01L21/266 ; H01L21/311 ; H01L21/02 ; H01L21/28 ; H01L21/285 ; H01L29/78
Abstract:
A method of manufacturing an insulated-gate semiconductor device, includes: digging a gate trench and a dummy trench; burying a dummy electrode in the dummy trench via a gate insulating film and burying a gate electrode in the gate trench via the gate insulating film; exposing an upper portion of the dummy electrode and selectively forming an insulating film for testing so as to cover the gate electrode; depositing a conductive film for testing on the dummy electrode and the insulating film for testing; and selectively testing an insulating property of the gate insulating film in the dummy trench by applying a voltage between the conductive film for testing and the charge transport, region.
Public/Granted literature
- US20200273971A1 INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-08-27
Information query
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