Invention Grant
- Patent Title: High electron mobility transistor and method of fabricating the same
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Application No.: US16535052Application Date: 2019-08-07
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Publication No.: US11081579B2Publication Date: 2021-08-03
- Inventor: Chun-Ming Chang , Chih-Tung Yeh
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201910653678.2 20190719
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66
Abstract:
An HEMT includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer and the second III-V compound layer are different from each other. A source electrode and a drain electrode are disposed on the second III-V compound layer. The gate electrode is disposed on the second III-V compound layer between the source electrode and the drain electrode. An insulating layer is disposed between the drain electrode and the gate electrode and covers the second III-V compound layer. At least one electrode is disposed on the insulating layer and contacts the insulating layer, wherein a voltage is applied to the electrode.
Public/Granted literature
- US20210020768A1 HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2021-01-21
Information query
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