Invention Grant
- Patent Title: FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
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Application No.: US16665338Application Date: 2019-10-28
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Publication No.: US11081583B2Publication Date: 2021-08-03
- Inventor: Eric C. Harley , Judson R. Holt , Yue Ke , Rishikesh Krishnan , Keith H. Tabakman , Henry K. Utomo
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent L. Jeffrey Kelly
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L21/8238 ; H01L27/092 ; H01L29/08 ; H01L29/16 ; H01L29/161 ; H01L29/165
Abstract:
A device and method for forming a semiconductor device includes forming a gate structure on a channel region of fin structures and forming a flowable dielectric material on a source region portion and a drain region portion of the fin structures. The flowable dielectric material is present at least between adjacent fin structures of the plurality of fin structures filling a space between the adjacent fin structures. An upper surface of the source region portion and the drain region portion of fin structures is exposed. An epitaxial semiconductor material is formed on the upper surface of the source region portion and the drain region portion of the fin structures.
Public/Granted literature
- US20200066908A1 FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOURCE AND DRAIN REGION EPITAXIAL GROWTH Public/Granted day:2020-02-27
Information query
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