Invention Grant
- Patent Title: Single photon avalanche diode and array of single photon avalanche diodes
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Application No.: US16636692Application Date: 2018-07-26
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Publication No.: US11081599B2Publication Date: 2021-08-03
- Inventor: Georg Roehrer
- Applicant: ams AG
- Applicant Address: AT Premstaetten
- Assignee: ams AG
- Current Assignee: ams AG
- Current Assignee Address: AT Premstaetten
- Agency: MH2 Technology Law Group LLP
- Priority: EP17185766 20170810
- International Application: PCT/EP2018/070328 WO 20180726
- International Announcement: WO2019/030009 WO 20190214
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L31/0216 ; H01L27/144

Abstract:
A single photon avalanche diode, SPAD, comprises an active area which is arranged to generate a photon triggered avalanche current. A cover is arranged on or above the active area. The cover shields the active area from incident photons. The cover comprises a stack of at least the first and a second metal layer. At least one of the metal layers, e.g. the first metal layer, comprises an aperture. The metal layers are arranged in the stack with respect to an optical axis such as to open an effective aperture along the optical axis. By way of the effective aperture a portion of the active area is exposed to incident photons being incident along the optical axis. The effective aperture is smaller than the aperture arranged in the first metal layer.
Public/Granted literature
- US20200168748A1 SINGLE PHOTON AVALANCHE DIODE AND ARRAY OF SINGLE PHOTON AVALANCHE DIODES Public/Granted day:2020-05-28
Information query
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