There are disclosed various implementations of an anode over cathode germanium and silicon photodiode including an N type silicon region formed in a silicon substrate, the N type silicon region being a cathode of the photodiode. In addition, the photodiode includes a P type germanium region situated over the N type silicon region, the P type germanium region being an anode of the photodiode. An anode contact of the photodiode is situated over the P type germanium region providing the anode. In some implementations, silicided cathode contacts are formed over the N type silicon region providing the cathode. In some implementations, a P type silicon cap is formed over the P type germanium region. In those implementations, a silicided anode contact may be situated on the P type silicon cap.