Invention Grant
- Patent Title: Light-emitting element and method of manufacturing same
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Application No.: US16723793Application Date: 2019-12-20
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Publication No.: US11081619B2Publication Date: 2021-08-03
- Inventor: Atsuo Michiue
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Foley & Lardner LLP
- Priority: JPJP2018-244450 20181227
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/08 ; H01L33/32 ; H01L33/20 ; H01L21/302 ; H01L33/18

Abstract:
A method of manufacturing a light-emitting element includes: forming a plurality of masks on a surface of a first conductive semiconductor layer; forming a plurality of rods comprising a first conductive semiconductor by partially removing, in a depth direction, a portion of the first conductive semiconductor layer exposed from the masks by etching; forming an insulating film on the rods and a surface of a the remaining first conductive semiconductor layer; performing wet etching, in a state in which a mask covering the insulating film is not formed, to remove a first portion of the insulating film on lateral surfaces of the rods but retaining a second portion of the insulating film on a surface of the first conductive semiconductor layer; forming a plurality of light-emitting layers covering the lateral surfaces of the rods; and forming a plurality of second conductive semiconductor layers covering outer peripheries of the light-emitting layers.
Public/Granted literature
- US20200212253A1 LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SAME Public/Granted day:2020-07-02
Information query
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