Invention Grant
- Patent Title: Integrated circuit including power gating cell
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Application No.: US16845135Application Date: 2020-04-10
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Publication No.: US11082044B2Publication Date: 2021-08-03
- Inventor: Chanhee Park , Jongwoo Kim , Minsu Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2019-0043308 20190412,KR10-2020-0023012 20200225
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/16 ; H03K19/003 ; G11C5/14 ; H03K19/00 ; H03K17/687

Abstract:
An integrated circuit is provided. The integrated circuit includes a power gating circuit configured to receive a power supply voltage from a first power line and to output a first driving voltage to a first virtual power line and a logic circuit electrically connected to the first virtual power line and configured to receive power from the power gating circuit. The power gating circuit includes a first p-type transistor and a first n-type transistor connected in parallel between the first power line and the first virtual power line.
Public/Granted literature
- US20200328746A1 INTEGRATED CIRCUIT INCLUDING POWER GATING CELL Public/Granted day:2020-10-15
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