Solid-state imaging device with pixels having an in-pixel capacitance
Abstract:
The present disclosure relates to a solid-state imaging device and an electronic device capable of effectively preventing blooming. Provided is a solid-state imaging device including: a pixel array portion in which a plurality of pixels is two-dimensionally arranged, in which the pixels each include an in-pixel capacitance and a counter electrode of the in-pixel capacitance, the in-pixel capacitance being provided on a side opposite to a light incident surface of a photoelectric conversion element provided in a semiconductor substrate, the counter electrode being provided in the semiconductor substrate. The present disclosure can be applied to, for example, a back-illuminated CMOS image sensor.
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