Invention Grant
- Patent Title: Solid-state imaging device with pixels having an in-pixel capacitance
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Application No.: US16616618Application Date: 2018-05-18
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Publication No.: US11082649B2Publication Date: 2021-08-03
- Inventor: Masaaki Takizawa , Yorito Sakano
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JPJP2017-110382 20170602,JPJP2017-179824 20170920
- International Application: PCT/JP2018/019231 WO 20180518
- International Announcement: WO2018/221261 WO 20181206
- Main IPC: H04N5/359
- IPC: H04N5/359 ; H04N5/369 ; H04N5/3745

Abstract:
The present disclosure relates to a solid-state imaging device and an electronic device capable of effectively preventing blooming. Provided is a solid-state imaging device including: a pixel array portion in which a plurality of pixels is two-dimensionally arranged, in which the pixels each include an in-pixel capacitance and a counter electrode of the in-pixel capacitance, the in-pixel capacitance being provided on a side opposite to a light incident surface of a photoelectric conversion element provided in a semiconductor substrate, the counter electrode being provided in the semiconductor substrate. The present disclosure can be applied to, for example, a back-illuminated CMOS image sensor.
Public/Granted literature
- US20200186732A1 SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE Public/Granted day:2020-06-11
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