Invention Grant
- Patent Title: Etching composition and etching method using the same
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Application No.: US16855864Application Date: 2020-04-22
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Publication No.: US11091695B2Publication Date: 2021-08-17
- Inventor: Hye Hee Lee , Hyeon Woo Park , Myung Ho Lee , Myung Geun Song
- Applicant: ENF TECHNOLOGY CO., LTD.
- Applicant Address: KR Yongin-si
- Assignee: ENF TECHNOLOGY CO., LTD.
- Current Assignee: ENF TECHNOLOGY CO., LTD.
- Current Assignee Address: KR Yongin-si
- Agency: McCoy Russell LLP
- Priority: KR10-2019-0047811 20190424
- Main IPC: C09K13/06
- IPC: C09K13/06
Abstract:
Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.
Public/Granted literature
- US20200339879A1 ETCHING COMPOSITION AND ETCHING METHOD USING THE SAME Public/Granted day:2020-10-29
Information query
