Invention Grant
- Patent Title: Etching composition and method for manufacturing semiconductor device using the same
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Application No.: US16387892Application Date: 2019-04-18
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Publication No.: US11091696B2Publication Date: 2021-08-17
- Inventor: Yongtae Kim , Junghun Lim , Soojin Kim , Jung-Min Oh , Seungmin Jeon , Hayoung Jeon
- Applicant: Samsung Electronics Co., Ltd. , Soulbrain Co., Ltd.
- Applicant Address: KR Suwon-si; KR Seongnam-si
- Assignee: Samsung Electronics Co., Ltd.,Soulbrain Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.,Soulbrain Co., Ltd.
- Current Assignee Address: KR Suwon-si; KR Seongnam-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2018-0107126 20180907
- Main IPC: C09K13/08
- IPC: C09K13/08 ; H01L21/02 ; H01L21/306 ; H01L29/786 ; H01L29/66 ; H01L29/06 ; H01L29/423
Abstract:
Provided are an etching composition and a method for manufacturing a semiconductor device using the same. According to embodiments, the etching composition may comprise from about 15 wt % to about 75 wt % of peracetic acid; a fluorine compound; an amine compound; and an organic solvent.
Public/Granted literature
- US20200079999A1 ETCHING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2020-03-12
Information query
