Invention Grant
- Patent Title: Enhanced auto-precharge memory scheduling policy
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Application No.: US16728679Application Date: 2019-12-27
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Publication No.: US11094370B2Publication Date: 2021-08-17
- Inventor: Shadi T. Khasawneh , Mukund Ramakrishna
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Nicholson De Vos Webster & Elliott, LLP
- Main IPC: G06F13/28
- IPC: G06F13/28 ; G11C11/4094 ; G11C11/4076 ; G11C11/4093 ; G06F12/12 ; G11C11/4091 ; G11C11/408 ; G11C13/00

Abstract:
Disclosed embodiments relate to enhanced auto-precharge memory scheduling. In one example, a system includes a memory having a matrix of storage cells, which, responsive to a row address strobe (RAS) signal, activates a given row, responsive to a column address strobe (CAS) signal, selects storage cells in the given row, and, responsive to a combined auto-precharge (AP) and CAS signal, accesses, then closes the given row. A memory controller selects a memory request from a memory request queue, generates the RAS signal to activate a row, when another memory request to the row is enqueued, generates the CAS signal to select a storage cell, when another memory request to a same bank but a different row is enqueued, generates the combined AP and CAS signal, and, when no memory request to the same bank is enqueued, generates the CAS signal only, allowing a close timer to close the row.
Public/Granted literature
- US20210201984A1 ENHANCED AUTO-PRECHARGE MEMORY SCHEDULING POLICY Public/Granted day:2021-07-01
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