A method for cleaning a semiconductor wafer, including: supplying a semiconductor wafer whose surface has an oxide film formed thereon with a cleaning solution capable of removing the oxide film; and cleaning, while rotating, the semiconductor wafer to remove the oxide film formed on the surface of the semiconductor wafer. The oxide film is removed such that a rotational speed of the semiconductor wafer is 300 rpm or more after the cleaning with the cleaning solution is started and before a water-repelling surface is attained, and then the rotational speed of the semiconductor wafer is changed to 100 rpm or less to completely remove the oxide film. A method for cleaning a semiconductor wafer by which both surface roughness improvement and surface defect suppression can be achieved.