Invention Grant
- Patent Title: Determining overlay of features of a memory array
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Application No.: US16372950Application Date: 2019-04-02
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Publication No.: US11094643B2Publication Date: 2021-08-17
- Inventor: Kendall Smith , Kari McLaughlin , Mario J. Di Cino , Xue Chen , Lane A. Gray , Joseph G. Lindsey
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/768 ; H01L21/027 ; H01L23/528 ; H01L21/3213

Abstract:
Methods, apparatuses, and systems related to determining overlay of features of a memory array are described. An example method includes forming a plurality of contacts on a working surface and selectively forming a first portion of a layer of conductive lines and a second portion of the layer of conductive lines in contact with the contacts. The first portion of the layer of conductive lines formed over the working surface is separated from the second portion of the layer of conductive lines formed over the working surface by a gap. The method includes determining an overlay of at least one of the contacts formed over the working surface in the gap relative to one of the conductive lines formed over the working surface.
Public/Granted literature
- US20200321283A1 DETERMINING OVERLAY OF FEATURES OF A MEMORY ARRAY Public/Granted day:2020-10-08
Information query
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