Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US16989802Application Date: 2020-08-10
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Publication No.: US11094810B2Publication Date: 2021-08-17
- Inventor: Tatsuya Naito
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JPJP2016-158694 20160812
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/417 ; H01L21/76 ; H01L29/32 ; H01L29/36 ; H01L29/861 ; H01L21/263 ; H01L21/30 ; H01L21/322 ; H01L21/324 ; H01L29/08 ; H01L29/10 ; H01L29/66 ; H01L21/265
Abstract:
There is provided a semiconductor device comprising: a semiconductor substrate; an emitter region of a first conductivity type provided inside the semiconductor substrate; a base region of a second conductivity type provided below the emitter region inside the semiconductor substrate; an accumulation region of the first conductivity type provided below the base region inside the semiconductor substrate, and containing hydrogen as an impurity; and a trench portion provided to pass through the emitter region, the base region and the accumulation region from an upper surface of the semiconductor substrate.
Public/Granted literature
- US20200373418A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2020-11-26
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