Invention Grant
- Patent Title: Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device
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Application No.: US16483754Application Date: 2018-02-20
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Publication No.: US11094835B2Publication Date: 2021-08-17
- Inventor: Tomoaki Furusho , Takanori Tanaka , Takeharu Kuroiwa , Toru Ujihara , Shunta Harada , Kenta Murayama
- Applicant: Mitsubishi Electric Corporation , NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Applicant Address: JP Tokyo; JP Aichi
- Assignee: Mitsubishi Electric Corporation,NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Current Assignee: Mitsubishi Electric Corporation,NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Current Assignee Address: JP Tokyo; JP Aichi
- Agency: Xsensus LLP
- Priority: JPJP2017-062447 20170328
- International Application: PCT/JP2018/005948 WO 20180220
- International Announcement: WO2018/180013 WO 20181004
- Main IPC: H01L29/868
- IPC: H01L29/868 ; C23C16/32 ; C30B25/20 ; C30B29/36 ; H01L21/02 ; H01L21/205
Abstract:
It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm−3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm−3.
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