Invention Grant
- Patent Title: High voltage photovoltaics integrated with light emitting diode containing zinc oxide containing layer
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Application No.: US16733657Application Date: 2020-01-03
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Publication No.: US11094843B2Publication Date: 2021-08-17
- Inventor: Stephen W. Bedell , Ning Li , Devendrá K. Sadana , Ghavam G. Shahidi
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L31/153
- IPC: H01L31/153 ; H01L31/0735 ; H01L31/18 ; H01L33/00 ; H01L31/0352 ; H01L33/32 ; H01L33/06 ; H01L25/16 ; H01L31/02 ; H01L31/147 ; H01L33/42
Abstract:
An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.
Information query
IPC分类:
